? 2006 ixys all rights reserved 1 - 4 0649 ixkp 10N60C5M ixys reserves the right to change limits, test conditions and dimensions. advanced technical information i d25 = 5.4 a v dss = 600 v r ds(on) max = 0.385 coolmos power mosfet features ? fast coolmos power mosfet - 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (uis) ? fully isolated package applications ? switched mode power supplies (smps) ? uninterruptible power supplies (ups) ? power factor correction (pfc) ? welding ? inductive heating ? pdp and lcd adapter mosfet symbol conditions maximum ratings v dss t vj = 25c 600 v v gs 20 v i d25 i d90 t c = 25c t c = 90c 5.4 3.7 a a e as e ar single pulse repetitive 225 0.3 mj mj dv/dt mosfet dv/dt ruggedness v ds = 0...480 v 5 0 v/ns d g s to-220 abfp g d s fully isolated package n-channel enhancement mode low r dson , high v dss mosfet ultra low gate charge i d = 3.4 a; t c = 25c symbol conditions characteristic values (t vj = 25 c, unless otherwise speci? ed) min. typ. max. r dson v gs = 10 v; i d = 5.2 a 350 385 m v gs(th) v ds = v gs ; i d = 0.34 ma 2.5 3 3.5 v i dss v ds = 600 v; v gs = 0 v t vj = 25c t vj = 125c tbd 1a a i gss v gs = 20 v; v ds = 0 v 100 na c iss c oss v gs = 0 v; v ds = 100 v f = 1 mhz 790 38 pf pf q g q gs q gd v gs = 0 to 10 v; v ds = 400 v; i d = 5.2 a 17 4 6 22 nc nc nc t d(on) t r t d(off) t f v gs = 10 v; v ds = 400 v i d = 5.2 a; r g = 4.3 tbd tbd tbd tbd ns ns ns ns r thjc 3.95 k/w coolmos is a trademark of in? neon technologies ag.
? 2006 ixys all rights reserved 2 - 4 0649 ixkp 10N60C5M ixys reserves the right to change limits, test conditions and dimensions. advanced technical information source-drain diode symbol conditions characteristic values (t vj = 25c, unless otherwise speci? ed) min. typ. max. i s v gs = 0 v 5.2 a v sd i f = 5.2 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 5.2 a; -di f /dt = 100 a/s; v r = 400 v 260 21 24 ns c a component symbol conditions maximum ratings t vj t stg operating -40...+150 -40...+150 c c m d mounting torque 0.4 ... 0.6 nm symbol conditions characteristic values min. typ. max. r thch r thja with heatsink compound thermal resistance junction - ambient 0.50 80 k/w k/w weight 2g
? 2006 ixys all rights reserved 3 - 4 0649 ixkp 10N60C5M ixys reserves the right to change limits, test conditions and dimensions. advanced technical information to-220 abfp outline 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 20 v 0 5 10 15 20 25 0 5 10 15 20 v ds [v] i d ] a [ 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 20 v 0 2 4 6 8 10 12 14 16 0 5 10 15 20 v ds [v] i d ] a [ t j = 25c v gs = v gs = t j = 150c ? p a a1 h a2 q l1 d e l b b1 c e 04080120160 0 5 10 15 20 25 30 35 t c [c] p tot [w] fig. 1 power dissipation fig. 2 typ. output characteristics fig. 3 typ. output characteristics
? 2006 ixys all rights reserved 4 - 4 0649 ixkp 10N60C5M ixys reserves the right to change limits, test conditions and dimensions. advanced technical information typ 98 % 0 0.2 0.4 0.6 0.8 1 1.2 -60 -20 20 60 100 140 180 t j [c] r ) n o ( s d [ ] 25 c 150 c 0 4 8 12 16 20 24 28 32 36 40 0246810 v gs [v] i d ] a [ 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 00.511.52 v sd [v] i f ] a [ 120 v 400 v 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 q g ate [nc] v s g ] v [ ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 050100150200 v ds [v] c] f p [ 0 50 100 150 200 250 20 60 100 140 180 t j [c] e s a ] j m [ 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v ) s s d ( r b ] v [ v ds = t jv = 150c i d = 5.2 a v gs = 10 v v ds > 2 r ds(on) max i d t j = t j = v ds = v gs = 0 v f = 1 mhz i d = 3.4 a i d = 0.25 ma i d = 5.2 a pulsed 5 v 5.5 v 6 v 6.5 v 7 v 20 v 0 0.4 0.8 1.2 1.6 0 5 10 15 20 i d [a] r ) n o ( s d [ ] fig. 4 drain-source on-state resistance fig. 3 typ. drain-source on-state resistance characteristics of igbt fig. 6 forward characteristic of reverse diode fig. 7 typ. gate charge fig. 9 avalanche energy fig. 10 drain-source breakdown voltage fig. 5 typ. transfer characteristics fig. 8 typ. capacitances
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